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| igbt highspeed5igbtintrenchstop tm 5technology IGZ75N65H5 650vigbthighspeedseriesfifthgeneration datasheet industrialpowercontrol
2 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 highspeed5igbtintrenchstop tm 5technology featuresandbenefits: highspeedh5technologyoffering ?ultralowlossswitchingthankstokelvinemitterpinin combinationwithtrenchstop tm 5 ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications ?uninterruptiblepowersupplies ?weldingconverters ?midtohighrangeswitchingfrequencyconverters ?solarstringinverters packagepindefinition: ?pinc&backside-collector ?pine-emitter ?pink-kelvinemitter ?ping-gate pleasenote:theemitterandkelvinemitterpinsarenot exchangeable.theirexchangemightleadtomalfunction. keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGZ75N65H5 650v 75a 1.65v 175c g75eh5 pg-to247-4 3 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 119.0 75.0 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 300.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 300.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 395.0 197.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.38 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =75.0a t vj =25c t vj =100c t vj =150c - - - 1.65 1.82 1.90 2.10 - - v gate-emitter threshold voltage v ge(th) i c =0.75ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 850.0 75.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =75.0a - 104.0 - s 1) defined by design. not subject to production test. 5 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 4300 - output capacitance c oes - 75 - reverse transfer capacitance c res - 16 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =75.0a, v ge =15v - 166.0 - nc internal emitter inductance 1) measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 26 - ns rise time t r - 11 - ns turn-off delay time t d(off) - 347 - ns fall time t f - 15 - ns turn-on energy e on - 0.68 - mj turn-off energy e off - 0.43 - mj total switching energy e ts - 1.11 - mj t vj =25c, v cc =400v, i c =37.5a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =18.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode from ikz75n65eh5. switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 24 - ns rise time t r - 13 - ns turn-off delay time t d(off) - 400 - ns fall time t f - 15 - ns turn-on energy e on - 1.10 - mj turn-off energy e off - 0.48 - mj total switching energy e ts - 1.58 - mj t vj =150c, v cc =400v, i c =37.5a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =18.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diode from ikz75n65eh5. 1) the internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin. 6 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s, i cmax definedbydesign-notsubjectto production test) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 30 60 90 120 150 180 210 240 270 300 v ge = 19v 18v 15v 14v 11v 9v 8v 7v 5v 7 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 30 60 90 120 150 180 210 240 270 300 v ge =19v 17v 15v 11v 9v 8v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 300 t vj = 25c t vj = 175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c = 20a i c = 37.5a i c = 75a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 25 50 75 100 125 150 175 200 225 1 10 100 1000 t d(off) t f t d(on) t r 8 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =37.5a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =37.5a, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.75ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =10 w , r g(off) =18 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 25 50 75 100 125 150 175 200 225 0 1 2 3 4 5 6 7 8 9 e off e on e ts 9 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =37.5a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =37.5a, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =37.5a, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 e off e on e ts figure 16. typicalgatecharge ( i c =75a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 v ce = 130v v ce = 520v 10 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.010336 2.8e-5 2 0.078242 2.3e-4 3 0.081139 2.3e-3 4 0.196217 0.013145 5 0.015938 0.113481 6 1.8e-3 1.869237 11 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> 12 IGZ75N65H5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief 13 IGZ75N65H5 high speed series fifth generation rev. 2.1, 2014-10-31 revision history IGZ75N65H5 previous revision revision date subjects (major changes since last revision) 1.1 2014-10-17 preliminary data sheet 2.1 2014-10-31 final data sheet ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief |
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